Total 2,387 Education / Training job vacancies in Hong Kong

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field with at least 5 years' of relevant experience.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Interested applicants are invited to apply directly at the NUS Career Portal

Your application will be processed only if you apply via NUS Career Portal

We regret that only shortlisted candidates will be notified.

Job Description

The Research Engineer will be involved in developing computer models for assessing climate change impacts on marine ecosystems. He/she will also be involved in collecting field data for calibrating and validating model systems. In addition to the above, the Research Engineer is expected to also participate actively in research meetings, present research findings, write reports and research papers.

Job Requirements

• Possess at least a good Bachelor’s degree in Civil and/or Environmental Engineering or equivalent.
• Experience in computational modelling in environmental engineering or climate change is preferred.
• Open to fixed term contract

Job Description:

• Be a member of the leadership team to achieve the vision and mission of the National GaN Technology Centre (NGTC).
• Lead the Technology, Engineering and Industry team in technology road mapping and R&D pathfinding in device architecture, fabrication process technology, and MMIC design.
• Lead the Technology team, which comprises (a) characterization & modelling, (b) MMIC design, testing & model validation, (c) device failure and reliability analysis, (d) ultra high frequency GaN-on-SiC device design, layout, fabrication and characterization, and (e) low voltage GaN-on-Silicon device design, layout, fabrication and characterization.
• Coordinate with the Engineering team to develop ultra high frequency devices, ultra low voltage devices, and their MMICs.
• Coordinate with the Engineering and Operations teams to ensure timely delivery of the projects.
• Initiate and secure research grants and industry funding.
• Initiate, coordinate and manage research collaborations with IHLs and industry partners.
• Provide regular progress report of the Technology team’s activities to NGTC management.
• Represent NGTC in customer meetings.

Requirements:

• PhD in Electrical & Electronic Engineering, Materials Science and Engineering, Microelectronics Engineering, or closely related fields are welcome to apply.
• Deep understanding of GaN-HEMT device physics and GaN-based MMICs.
• At least 15-20 years of post-PhD hands-on experience in GaN HEMT and MMIC technology development including design, characterization (e.g. DC, small-signal and load-pull measurement), and modelling; preferably in RF GaN-on-Silicon or GaN-on-SiC technologies.
• At least 8 years of experience in leading a team of research engineers/scientists in managing multiple projects.
• Candidates with industry experience in GaN related R&D would be preferred.
• Working knowledge and hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, problem-solving methods, and in-line metrology techniques is desired.
• Possess strong leadership, project management, interpersonal and oral/written communication skills.

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

As part of IME’s Photonics & Sensors Department, the candidate will take lead of the development of various testing capability for advanced photonics, including but not limited to chip-level and wafer-level testing of optical devices and electro-optical devices at high RF frequencies, as well as the testing of electro-optical sub-modules and sub-systems. You will work closely with an excellent multidisciplinary team working on advanced photonics.

Responsibilities:

• Develop various photonics testing capabilities for both chips and wafers, including design and building of measurement setups
• Perform chip-scale and wafer-scale data collection for OE, EO and OO devices from frequency range of 0 to 110 GHz
• Optimize data acquisition and analysis process to improve test efficiency, e.g. automation of measurement processes for wafer-scale testing and corner analysis
• Manage photonics laboratory including facilities, health and safety, equipment calibration, inventory and stocktake
• Take the lead to procure laboratory equipment and consumables
• Prepare technical presentations and papers for internal meetings, as well as conferences and journals
• Collaborate with project team to ensure quality and on-time delivery for various projects
• Performs other duties as assigned.

Qualifications:

• Bachelor’s or master’s degree in Physics, Electronic/Electrical Engineering, Photonics, Opto-electronics or equivalent
• More than 3 years hands-on experience in active photonics/optoelectronic device testing, especially for high-speed optical modulator and photodetector devices and electronic-photonic integrated circuit.
• More than 3 years hands-on experiences in optical setup construction and semiconductor & optoelectronic device characterization
• Experienced on experimental data acquisition and analysis
• Skillsets in programming or instrument automation is a plus
• Strong skills in problem-solving, communication and providing technical presentations
• Industry experience and awareness is a plus

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

Candidate will be part of Far-Backend Of Line (Far-BEOL) team of process module engineers, advancing specialty technologies at IME. His or her main roles and responsibilities include:

• Develop and support Chemical Mechanical Planarization (CMP) unit process capabilities for silicon photonics, flat optics, advanced packaging, MEMS, and wide bandgap semiconductor applications.
• Deliver innovations involving process methodologies, materials, or approach, and generate intellectual property related to various aspects of CMP.
• Participate as team member with process integration teams to actively support CMP process development, optimization and troubleshooting for various industry and grant projects.
• File patents/know-hows on new development activities.
• Publish research findings in prestigious journals and conferences.

Job Requirement:

• Masters with specialization in Electronics / Microelectronics / Materials Engineering / Chemical Engineering / Materials Science/ Chemistry / Physics or equivalent.
• Minimum 5 years of experience in CMP technologies, preferably in an industrial setting.
• Prior hands-on experience working on industry-scale 200 mm or 300 mm CMP equipment platforms (e.g., AMAT or Ebara platforms), with in-depth technical knowledge in process development, materials, and inline process control related to CMP.
• Knowledge of silicon photonics, advanced packaging, MEMS, or wide bandgap semiconductor technology platforms would be a plus, but not mandatory.
• Strong experimental design (DOE) and data analysis skills is preferred.
• Good interpersonal and strong demonstrated skills in collaborating with internal and external stakeholders.
• At least 2 years of demonstrated experience in managing projects of moderate complexity is preferred
• Good analytical skills and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
• Self-driven with strong interest in next-generation applications of CMP technologies and industry trends.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

Responsibilities:

• Engage and manage various stakeholders (internal and external) expectations and communication.
• Collaborate with functional teams to conduct cleanroom/facility planning and layout
• Carry out physical area/ floor marking, coordinate with functional teams in tool purchase, movement (in/out), tool relocation plan, project timeline and capacity update.
• Perform risk analysis of various project options and outcomes
• Maintain and validate capacity/capital/space models to enable accurate assessment of wafer fabrication and operations loading needs
• Support operational efficiency improvement efforts (cycle time, OEE improvement, capacity optimization, space optimization)

Requirements:

• Degree in Engineering (Industrial & Systems Engineering), Mechanical, or relevant field;
• Proficient in AutoCAD 2D/3D and Simulation Tool preferred
• Proficient with Microsoft Words, Excel and PowerPoint proficiency
• Preferably to have industrial engineering experience in a semiconductor/ manufacturing environment
• Ability to work independently and team player to deliver in fast paced and collaborative environment

Responsibilities:

• Engage and manage various stakeholders (internal and external) expectations and communication.
• Collaborate with functional teams to conduct cleanroom/facility planning and layout
• Carry out physical area/ floor marking, coordinate with functional teams in tool purchase, movement (in/out), tool relocation plan, project timeline and capacity update.
• Perform risk analysis of various project options and outcomes
• Maintain and validate capacity/capital/space models to enable accurate assessment of wafer fabrication and operations loading needs
• Support operational efficiency improvement efforts (cycle time, OEE improvement, capacity optimization, space optimization)

Requirements:

• Degree in Engineering (Industrial & Systems Engineering), Mechanical, or relevant field;
• Proficient in AutoCAD 2D/3D and Simulation Tool preferred
• Proficient with Microsoft Words, Excel and PowerPoint proficiency
• Preferably to have industrial engineering experience in a semiconductor/ manufacturing environment
• Ability to work independently and team player to deliver in fast paced and collaborative environment

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

As part of IME’s Photonics & Sensors Department, the candidate will take lead of the development of various testing capability for advanced photonics, including but not limited to chip-level and wafer-level testing of optical devices and electro-optical devices at high RF frequencies, as well as the testing of electro-optical sub-modules and sub-systems. You will work closely with an excellent multidisciplinary team working on advanced photonics.

Responsibilities:

• Develop various photonics testing capabilities for both chips and wafers, including design and building of measurement setups
• Perform chip-scale and wafer-scale data collection for OE, EO and OO devices from frequency range of 0 to 110 GHz
• Optimize data acquisition and analysis process to improve test efficiency, e.g. automation of measurement processes for wafer-scale testing and corner analysis
• Manage photonics laboratory including facilities, health and safety, equipment calibration, inventory and stocktake
• Take the lead to procure laboratory equipment and consumables
• Prepare technical presentations and papers for internal meetings, as well as conferences and journals
• Collaborate with project team to ensure quality and on-time delivery for various projects
• Performs other duties as assigned.

Qualifications:

• Bachelor’s or master’s degree in Physics, Electronic/Electrical Engineering, Photonics, Opto-electronics or equivalent
• More than 5 years hands-on experience in active photonics/optoelectronic device testing, especially for high-speed optical modulator and photodetector devices and electronic-photonic integrated circuit.
• More than 5 years hands-on experiences in optical setup construction and semiconductor & optoelectronic device characterization
• Experienced on experimental data acquisition and analysis
• Skillsets in programming or instrument automation is a plus
• Strong skills in problem-solving, communication and providing technical presentations
• Industry experience and awareness is a plus

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.

Position:

Our team is starting an exciting project to develop RF/mm-wave ICs for the future of communication for Beyond-5G to 6G applications. We are looking for an exceptional candidate with relevant expertise to join us. Our team focuses on developing communication modules for both terrestrial and non-terrestrial needs. You will work at the Institute of Microelectronics (IME) to create the most advanced semiconductor technologies. You will collaborate with world-leading industries and academic institutions on innovative designs and strategic intellectual properties.

Job Responsibility:

• Benchmarking with datasheets, prior arts, and latest academic work.
• In-depth design and analysis with electrical/electromagnetic simulations.
• In-depth analysis of design robustness, optimization, and testability.
• In-depth presentations and report recording of design, layout, test and measurement, and fault analysis.
• Working independently, as a team, and with collaborators from industry and academic backgrounds.

Pre-requisites:

• A Master’s / PhD Degree in Electronics or Electrical Engineering and proven academic and industry experience are pluses.
• Experienced in designing RF/mmWave such as LNA, mixer, PA, buffer, transmission line, baluns, PLL, VCO, etc.
• Experienced in designing base-band/mixed-signal circuits, such as amplifiers, bandgap, ADC, DAC, etc., is a plus.
• Knowledgeable in design trade-offs at the circuit-level specification.
• Experienced in designing in CMOS and SiGe technology or any other technologies like RF-SOI and compound-semiconductor is a plus.
• Proficient in using Cadence and EM tools like ADS for EM circuit simulation, IC layout, LVS, and DRC verification.
• Familiarity with IC measurement and debugging and hands-on experience with RF/mmWave equipment such as spectrum analyzer, network analyzer, oscilloscope, and probe station.
• Good publication record with a strong awareness of state-of-the-art.
• Good communication and teamwork.

As part of IME Integrated Circuit Design and System Department, we are seeking a candidate with relevant experience in analog integrated circuit design. This candidate will contribute to developing analog circuit blocks e.g. low-power operational amplifiers, voltage/current references, and voltage regulators based on thorough topology analysis. This candidate will work closely with other team members for the circuit design, test verification, as well as system integration and validation for a broad range of innovative sensor systems.

Role & Responsibilities

• Circuit schematic design and simulation, layout supervision, pre-tapeout design verification, test plan development and chip measurement
• Work together with teams to investigate novel circuit/system solutions to create new inventions

Requirements

• Bachelor’s / Master’s degree in Electronic Engineering
• Good understanding of CMOS analog IC design methodologies
• Familiar with analog IC design and verification flow
• Industry experience would be a plus
• Familiar with the IC test equipment such as oscilloscope, spectrum analyzer, etc.
• Able to generate high-quality scientific publications and patents
• Team player, quick learner and self-driven