Total 451 Senior Executive level Education / Training job vacancies in d23 hillview dairy farm bukit panjang choa chu kang

Join the Institute of Microelectronics (IME) to be immersed in cutting-edge semiconductor research. As a research institute within the Agency for Science, Technology and Research (A*STAR), IME bridges the gap between academia and industry. Our mission is to accelerate innovation in advanced packaging, piezoMEMS, SiC, RF/mmWave GaN, and photonics & sensors, and to develop talent and inspire in Singapore.

We are looking for a passionate individual to join our Technology-Business Development department. You will be responsible for sales and marketing, account management and industry development. If you're excited about the future of microelectronics and wish to contribute to the development of Singapore's innovation engine for microelectronics, we want you on our team!

Job Responsibilities

• Perform market intelligence, develop and execute go-to-market plans for commercialization of IME's research capabilities.
• Lead industry and customer engagements, understand their needs and work with Technology Development teams to formulate value propositions.
• Structure, review and negotiate contracts with industry partners and customers.
• Develop industry network, manage accounts and build relationships to win and retain industry partners and customers.

Job Requirements:

• Degree in Science or Engineering.
• Ability to think on the feet
• Result-oriented, analytical, proactive, resourceful and team player
• Good communication, presentation and interpersonal skills
• Resilience and adaptability to work in a fast-paced and fast-changing environment
• Passion to develop Singapore's semiconductor industry

Roles and Responsibilities:

• TCAD modeling, simulation, and innovative design of high power electronics devices, as well as device characterization.
• Develop and simulate high power SiC MOSFETs (planar, trench, Super-Junction MOSFET, IGBT) with a blocking voltage exceeding 1.2K using the industry-standard Synopsys/Silvaco simulator.
• Create and simulate practical & efficient junction terminations.
• Model transport and carrier scattering in devices operating under extreme ambient conditions.
• Serve as a valuable resource for colleagues with lesser TCAD power electronics experience and take lead in group projects with managing risks & resource requirements.
• Foster close collaborations with both internal and external customers to fully understand customer issues and requirements.

Job Requirements:

• PhD Degree in Electrical Engineering or related field.
• >2-3 years industrial experience for high power devices design and modeling.
• Thorough understanding of different types of high-voltage, high-power MOSFETs including Planar, Trench, Super-Junction MOSFETs, and IGBTs, with a focus on design and device characterizations.
• Hands-on skill in designing MOSFET/diode layouts.
• Excellent communication skills to effectively engage with customers, address their needs, resolve issues, and meet demands.

As an Equipment Engineer, you will own all assigned toolsets. The preferred candidate can troubleshoot difficult and poorly defined problems related to mechanics, electronics, and processes using tool knowledge/experience, SPC, schematics, and other available resources. The candidate will collaborate extensively with the area maintenance team and process engineering. Some collaboration will be with tool vendors, other area engineers/managers, procurement, and production.

Responsibilities:

• Provide technical leadership and management of 200MM and 300MM Semiconductor processing equipment in Support of Main Stream Semiconductor Processes and Advanced Packaging processes. Highly desirable for a candidate to have a background in at least one of the following areas: Photolithography, PVD and CVD Thin Films, Dry Etch, Wet Etch /Wafer Clean, Diffusion, Bond, Electroplate (ECD), CMP, or Metrology (some areas may be combined).
• Work with process engineering to drive root-cause corrective actions for equipment failures, implement permanent solutions, and eliminate chronic and long-term down events.
• Lead continuous improvement teams to drive tool matching, availability, and throughput improvements and reduce risk.
• Management of new tool installation, start-up, and tool upgrades to increase fab capability and capacity, lower costs, and improve yields.
• Work with minimal supervision, balancing competing priorities, to serve the needs of the Maintenance, Production, and Development organizations.
• Participate in cross-functional teams that create efficiencies across all layers of the organization.

Required Qualifications

• Degree / Diploma with 10+ years of relevant Semiconductor Industry Experience in Mechanical, Electrical, or Chemical Engineering, Materials Science, Physics, or another relevant Engineering discipline.
• 6+ years of experience within the respective areas of expertise. Experience should include one or more: Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, and Wet Chemistry.
• Demonstrated experience with the application of structured problem-solving methodology.
• Positive interpersonal skills, highly energetic and self-motivated.
• Demonstrated ability to meet requirements and deliver results.
• Ability to manage and execute multiple projects simultaneously and shift priorities to meet business needs.

Preferred Qualifications

• Diploma or Bachelor of Science/Engineering in Mechanical, Electrical or Chemical Engineering or Materials Science, Physics or other relevant Engineering discipline.
• Semiconductor Wafer Handling, RF Power, High Vacuum, Toxic Gas Delivery systems, Precision Optics, Wet Chemistry.
• Positive interpersonal skills, highly energetic and self-motivated.
• Experience with Automated Fault Detection and Classification Systems (FDC).
• Strong background with utilizing SPC.
• High level of understanding of equipment component behaviour.
• Experience Integrating Equipment Maintenance Management Software

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Job Description:

Be part of an exciting Team working on cutting-edge advanced packaging process technologies. Partner and work with various FAB users, to always enable smooth operations and develop packaging solutions and taking the solutions from concept to production. Responsibilities will also include assisting in operations support in FAB clean rooms to make sure all rounded supports are provided.

This position is based in Singapore.

Responsibilities:

• Looking for a reliable, agile, and professional individual.
• Oversee the Team spare/ chemicals / inventories stores – upkeep with good house-keepings, periodic cycle counts. Maintain the inventory database, ensuring timely and accurate recordings, raise purchase requests accordingly.
• Take charge and provide day to day supports in all logistics needs and initiate material/spare parts procurement when required to ensure smooth Fab operations.
• Accountable for the inventory movements required to enable smooth lot operations across IME Premises.
• Follow through the orders from the start of purchase till delivery and to ensure that goods are delivered are on time.
• Work seamlessly with various stakeholders to provide logistics support and deliver inventory on time.
• Work towards and employ critical thinking, put-up good initiatives to move forward to digitalization.
• Ability to work in a multi-task environment.

Experience:

• Education: Diploma in engineering discipline. Preferably in supply chain logistic/ warehouse operations.
• At least 2 years of warehouse operations.
• Preferably some experience in semiconductor / manufacturing environment, with good wide contacts with semiconductor material suppliers, equipment vendors.
• Strong knowledge-based on excel skills and some knowledge of supply chain analytics.

ROLE:

A*Star-IME is currently working on establishing a hybrid fabrication platform for 150mm and 200mm Silicon Carbide (SiC) power MOSFETs as a new pillar on Singapore"s Future of Microlectronics in wide-bandgap. The main objective of this SiC RnD program is to advance 200mm SiC technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The ultimate aim is to drive disruptive innovations in power device research, specifically focusing on >1.7KV power MOSFETs. These innovations will have significant applications in enhancing automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. Key aspects for this role to be successful include the development and integration of several process modules, such as gate oxidation, implantation, implant activation, layout design verification, lithography, and ohmic contact formation. We are actively looking for individuals with extensive industry experience in device physics and process integration to join our team. The candidate will contribute to process integration, E-test and module process related data analysis, yield enhancement, and device physics.

RESPONSIBILITIES:

• Lead develop process technology for SiC power MOSFETs and ensure it meets the requirements for prototyping manufacturing

• Collaborate with advanced process module development team to establish a process flow for fabricating specific MOS devices

• Responsible to develop and improve test structures that enable fast and rigorous characterization of process

• Accountable to improve device performance and yield through the design, execution, and analysis of experiments for each specific device and product

• Work with cross-functional teams to minimize defects and address technical and yield concerns

• Drive CIP (Continuous improvement plans) to deliver integrated process modules and specific device per project goals

• Make decisions regarding the delivery of process, active and passive devices to multiple customers

REQUIREMENTS:

• MS/PhD Degree in Electrical Engineering or related field

• >3 years industrial experience for MOSFET process integration and device physics

• Proactive, self-motivated, and results-oriented professional with the ability to make efficient contributions to and lead technical discussions

• Extensive expertise in material and process integration

• Comprehensive understanding of semiconductor materials and the physics of MOSFET devices

• Strong communication skills to effectively communicate information about module integration for device fabrication and with customers

• Excellent analytical skills for interpreting process and device data, coupled with strong presentation abilities

Job Description:

• Develop epitaxial processes for selective and non-selective growth of Ge and SiGe layers on Si substrates.
• Improve baseline processes for high-quality SiGe and Ge epitaxy: control uniformity and thickness and minimize threading dislocation density.
• Design epitaxial structures and develop processes for Ge and SiGe photodetectors (PD) and electro-absorption modulators (EAM) devices, integrating Ge/SiGe devices into Silicon photonic circuits.
• Troubleshoot to maintain tool and process quality. Prepare Standard Operating Procedures (SOPs), Out-of-Control Plans, and other technical documentation to maintain processes and tools.
• Perform metrology and characterization of SiGe and Ge epilayers (e.g., dopant and thickness uniformity, surface roughness, crystal quality, stress, carrier lifetime, etc.).
• Correlate SiGe and Ge crystal defects (type and density) with device performance and yield, and with device processing conditions.
• Provide technical support for technology transfer and process release requirements.
• Prepare technical presentations and papers for meetings, conferences and journals.

Requirements:

• PhD degree in Materials Science and Engineering, Physics, Chemical Engineering, Chemistry, Microelectronics Engineering, or closely related fields are welcome to apply.
• Prior 3 to 5 years direct experience in SiGe/Ge epitaxy and materials characterization.
• Working knowledge and prior hands-on experience in Design of Experiments (DOE) methodologies, statistical root cause analysis, and problem-solving methods, is desired.
• Understanding of epitaxial system hardware is advantageous.
• Knowledge and prior hands-on experience on basic process characterization techniques such as SEM/TEM, EDX, SIMS, AFM, Ellipsometry is advantageous.
• Possess good interpersonal and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.

We are looking for a Research Scientist / Senior Research Scientist to work on a project on developing all-optical neuromorphic computing system. This project is looking to develop on-demand light-matter interaction technology with atomically-thin materials for waveguide optical signal control. The successful candidate will be expected to work under the guidance of the principal investigator and publish in high-quality peer-reviewed scientific journals.

The selected candidate will have access to excellent scientific resources and opportunities for future career development (e.g. presentations at conferences, opportunities for grant applications, advanced training courses, etc.).

Job Requirements:

• PhD degree in Nanophotonics, Applied Physics, Optics, Materials Science or a related field with at least 5 years' of relevant experience.
• Experience in simulation, design, and characterization of nanophotonic/optical device.
• Experience in the exfoliation, transfer, and characterization of vdw materials.
• Knowledgeable in nanofabrication process for optoelectronic devices.
• Prior experience in optical system design, assembly and alignment will be an advantage.
• Demonstrated ability in developing high-quality, peer-reviewed scientific journal publications

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Job Description:

Candidate will be part of Far-Backend Of Line (Far-BEOL) team of process module engineers, advancing specialty technologies at IME. His or her main roles and responsibilities include:

• Develop and support Chemical Mechanical Planarization (CMP) unit process capabilities for silicon photonics, flat optics, advanced packaging, MEMS, and wide bandgap semiconductor applications.
• Deliver innovations involving process methodologies, materials, or approach, and generate intellectual property related to various aspects of CMP.
• Participate as team member with process integration teams to actively support CMP process development, optimization and troubleshooting for various industry and grant projects.
• File patents/know-hows on new development activities.
• Publish research findings in prestigious journals and conferences.

Job Requirement:

• Masters with specialization in Electronics / Microelectronics / Materials Engineering / Chemical Engineering / Materials Science/ Chemistry / Physics or equivalent.
• Minimum 5 years of experience in CMP technologies, preferably in an industrial setting.
• Prior hands-on experience working on industry-scale 200 mm or 300 mm CMP equipment platforms (e.g., AMAT or Ebara platforms), with in-depth technical knowledge in process development, materials, and inline process control related to CMP.
• Knowledge of silicon photonics, advanced packaging, MEMS, or wide bandgap semiconductor technology platforms would be a plus, but not mandatory.
• Strong experimental design (DOE) and data analysis skills is preferred.
• Good interpersonal and strong demonstrated skills in collaborating with internal and external stakeholders.
• At least 2 years of demonstrated experience in managing projects of moderate complexity is preferred
• Good analytical skills and oral/written communication skills, with ability to deliver clear and concise messages to both internal and external stakeholders.
• Self-driven with strong interest in next-generation applications of CMP technologies and industry trends.

Responsibilities:

• Engage and manage various stakeholders (internal and external) expectations and communication.
• Collaborate with functional teams to conduct cleanroom/facility planning and layout
• Carry out physical area/ floor marking, coordinate with functional teams in tool purchase, movement (in/out), tool relocation plan, project timeline and capacity update.
• Perform risk analysis of various project options and outcomes
• Maintain and validate capacity/capital/space models to enable accurate assessment of wafer fabrication and operations loading needs
• Support operational efficiency improvement efforts (cycle time, OEE improvement, capacity optimization, space optimization)

Requirements:

• Degree in Engineering (Industrial & Systems Engineering), Mechanical, or relevant field;
• Proficient in AutoCAD 2D/3D and Simulation Tool preferred
• Proficient with Microsoft Words, Excel and PowerPoint proficiency
• Preferably to have industrial engineering experience in a semiconductor/ manufacturing environment
• Ability to work independently and team player to deliver in fast paced and collaborative environment

ROLE:
IME is leading the effort to establish the industry leading Silicon Carbide R&D program. This program aims to advance 200mm Silicon Carbide technologies in various areas, such as epitaxy, device design, process integration & fabrication, and power module packaging. The main objective is to drive disruptive innovations in power device research, with a specific focus on >1.2KV power MOSFETs. These innovations are intended to enhance automotive technologies, vehicle electrification, safety measures, sustainable energy grids, and industrial automation. Key aspects to demonstrate for this role include high power device design, novel device concepts, doping design, gate oxidation, and wide-bandgap process simulations. To achieve this, we are seeking individual with extensive industry experience in using Synopsys/Silvaco TCAD simulator, relevant device characterization skills, design simulation development abilities, a willingness to mentor junior staffs, and strong interpersonal skills. The candidate will contribute to the wide-bandgap & Silicon Carbide team by utilizing their device knowledge, guiding team on device characterization, implementing state-of-art Silicon Carbide power MOSFETs (Planar, Trench & Super-Junction), and innovative novel power MOSFETs for future applications.

RESPONSIBILITIES:

• TCAD modeling & simulation, novel high power device design, simulation, and device characterization

• Design and simulate high voltage Silicon Carbide MOSFETs (planar, trench, SJ MOSFET, IGBT) with a blocking voltage of >1.2K using Synopsys/Silvaco simulator

• Design & simulate practical and effective junction terminations

• Provide guidances on device structure, optimizing cell, power/performance analysis, process risk assessment, and recommendations for experimental split and improvement

• Develop and apply fundamental MOS device physics-based TCAD modelling & electric field management to calculate band structure, carrier transport, blocking voltage,
switching properties, and thermal management for vertical power devices in the presence of interface state density, gate oxide defects, and defects in Silicon Carbide

• Model transport and carrier scattering in devices operating in extreme ambient conditions

• Collaborate with diverse teams, including process integration, characterization, and circuit design engineers, to analyze and troubleshoot device-related issues during
development

• Serve as a resource for colleagues with less experience, and lead small projects with manageable risks and resource requirements

• Work closely with both internal and external customers to understand customer issues and align their demands. And grow this wide-bandgap team to ~5 headcounts in the
next 3 years.

JOB REQUIREMENTS:

• PhD in Electrical Engineering or related field

• >10 years industrial experience for high power device design and modeling

• Deep knowledge of high voltage, high power MOSFETs (including Planar, Trench, S-J MOSFETs, and IGBTs) design and device characterization on 4H-SiC & GaN substrates.

• Solid understanding of wide-bandgap semiconductor materials and the strong physics of MOSFET devices

• Ability to teach and transfer knowledge to junior staff members

• Ability to effectively communicate and plan with customers regarding their needs, issues, and demands

As part of IME’s Photonics & Sensors Department, the candidate will take lead of the development of various testing capability for advanced photonics, including but not limited to chip-level and wafer-level testing of optical devices and electro-optical devices at high RF frequencies, as well as the testing of electro-optical sub-modules and sub-systems. You will work closely with an excellent multidisciplinary team working on advanced photonics.

Responsibilities:

• Develop various photonics testing capabilities for both chips and wafers, including design and building of measurement setups
• Perform chip-scale and wafer-scale data collection for OE, EO and OO devices from frequency range of 0 to 110 GHz
• Optimize data acquisition and analysis process to improve test efficiency, e.g. automation of measurement processes for wafer-scale testing and corner analysis
• Manage photonics laboratory including facilities, health and safety, equipment calibration, inventory and stocktake
• Take the lead to procure laboratory equipment and consumables
• Prepare technical presentations and papers for internal meetings, as well as conferences and journals
• Collaborate with project team to ensure quality and on-time delivery for various projects
• Performs other duties as assigned.

Qualifications:

• Bachelor’s or master’s degree in Physics, Electronic/Electrical Engineering, Photonics, Opto-electronics or equivalent
• More than 5 years hands-on experience in active photonics/optoelectronic device testing, especially for high-speed optical modulator and photodetector devices and electronic-photonic integrated circuit.
• More than 5 years hands-on experiences in optical setup construction and semiconductor & optoelectronic device characterization
• Experienced on experimental data acquisition and analysis
• Skillsets in programming or instrument automation is a plus
• Strong skills in problem-solving, communication and providing technical presentations
• Industry experience and awareness is a plus

The above eligibility criteria are not exhaustive. A*STAR may include additional selection criteria based on its prevailing recruitment policies. These policies may be amended from time to time without notice. We regret that only shortlisted candidates will be notified.

Scientist/Senior scientist will be part of heterogeneous integration group focused on development of the quantum packaging technology platforms to integrate qubit and control chip on superconductivity interposer.

He/she will work with cross functional team to:

• Design and simulation of superconducting circuits for salable quantum processor in 3D flip-chip architecture.
• Explore and develop superconducting nanowire base photo detector.
• Design and layout of circuits components of a superconducting qubit.
• Develop design rules and PDK for quantum packaging technologies.
• Provide quantum packaging solutions to meet the system requirements based on the simulation results.
  Prepare competitive grant research proposals and lead execution of these proposals.
  Engage industry partners to align and develop the building blocks required for next generations quantum packaging platforms.

Job Requirements:

• Master/PhD in quantum computing; Electrical and Computer Engineering; Material science area
• 4 to 5 years’ experience in superconducting circuits design and simulation for scalable quantum processor. Deep understanding on 3D quantum package
• Working experience on measuring loss and dielectric constants of materials at cryogenic temperatures
• Strong communication, industry awareness, and problem-solving skills.
• Highly motivated to succeed, a self-starter who is driven and able to work with others effectively to get things done.

ROLE:
A*STAR-IME is leading the way in establishing industry first 200mm open Silicon Carbide (SiC) R&D program. The program specific focus is on advancing 200mm SiC technologies in key areas such as epitaxy, gate stack, ion implantation, and dry etching, and integrating these modules to fabricate high-performance power devices. Our objective is to drive innovation in power device research, particularly in power MOSFETs rated above 1.2KV. Developing key innovative process is crucial for creating high-performance devices that will contribute to advancements in automotive technologies, vehicle electrification, safety measures, sustainable energy grids, data centers, and industrial & aerospace automation. This role involve growing leadership into ion implantation processes for p-body, channel, guard ring, source contact, and other components. We are currently seeking such individual with ~5 years of experience in ion implantation. The chosen candidate will be responsible for independently supervising ion implantation processes, conducting ion implant simulations, possessing knowledge of crystallography and ion interaction with atoms, having strong understanding of implanters and related thermal processing physics, beam optics, dosimetry systems, and vacuum technology. The ideal candidate should also be willing to collaborate with various departments, the technology development group, and customers. Furthermore, the candidate will contribute to the wide-bandgap team by sharing the ion implantation expertise on compound semiconductor materials and collaborate with other departments working with Si-based technology. The candidate will also be groomed to lead this diffusion process module group of ~6 headcounts into the future.

RESPONSIBILITIES:

• Diagnose malfunctions and using test equipment & software to test faulty tool; applying knowledge of the functional operation of the ion implant equipment

• Support on-site ion implanters in creating, running & characterizing recipes for recipe validation and develop process to achieve the desired dopant profile with excellent
damage recovery.

• Collaborate with vendors to optimize equipment performance and reduce tool downtime

• Analyze data related to implant-related defects formation with quantification and defects minimizations strategy

• Examine work-orders and communicates with equipment operators to resolve equipment problems & determine mechanical and human errors contributed to the issues

• Perform scheduled preventive maintenance tasks with tool operators, especially in checking, cleaning, repairing, detecting and preventing problems

• Responsible for designing experiments for ion implantation at various dose, energy, tilt, and twist levels

REQUIREMENTS:

• Ms/PhD Degree in Electrical Engineering or related field

• >3-5 years industrial experience for high power device design and modeling

• Extensive proficiency in medium to high energy/current ion implantation processes, including a comprehensive knowledge of implant equipment, equipment parts, and
troubleshooting techniques to minimize equipment downtime

• Good understanding of wide bandgap semiconductor materials and their corresponding dopant species

• Expertise in ion channeling, ion bombardment, and their impact on the implant species profile

• In-depth comprehension of defect formation and annihilation processes in the implanted region of semiconductors

• Familiarity with essential device properties resulting from ion implantation

• Adept at mentoring and transferring knowledge to junior staff members

Role & Responsibilities:

• Responsibilities include diagnosing appropriate levels of metal/metal-alloy contaminations by oxygen and other contaminants; determining the root cause of contaminants, and establishing protocols for characterizations.
• Hands-on providing support for onsite metal PVD, including creating, running, and characterizing recipes to achieve the lowest resistances.
• Collaborates closely with equipment vendors and device engineers to optimize the metal-stack for device performances and robustness/reliability, from low to high temperatures.
• Lead data analysis related to implant-induced defects and cleaning issues on metal contacts with solutions development.
• Examines the work-functions of metal/metal-alloys suitable for Ohmic contact on SiC.
• Responsible for designing experiments for Ohmic contact on various SiC substrates with different doping types, determining their impact, and resolving issues to achieve the lowest specific contact resistances.
• Designing cleaning processes to obtain ideal Schottky diode using various metal/metal-alloys on SiC for high-performance applications.
• Work closely with cross-departmental and integration teams and in 3-5 years’ time develop a WBG backend process integration team of at least 4 persons.

Requirements:

• PhD Degree in Material Science, Physics, Electrical Engineering or related field.
• >8 years related industrial experience inclusing backend process module integration.
• Extensive hands-on experience in PVD (Physical Vapor Deposition) processing for metal depositions and interface tuning.
• Strong understanding of metal-semiconductor contact physics.
• Expertise in work-function tunings of metal and metal-alloy.
• Proficiency in modulating electron affinity through implantation or surface treatments of semiconductors.
• Familiarity with wide band-gap semiconductor materials and their interaction with metal/metal-alloys at various temperatures.
• Thorough fundamentals in Ohmic contact and Schottky diode physics, as well as the impact of defects and contaminations on electrical properties.
• Skilled at mentoring and transferring knowledge to junior staff members.
• Excellent communication skills to effectively address customers' needs, concerns, and solution requirements.